According to information shared by X leak expert Ice Universe , the Galaxy S26 Ultra will be equipped with advanced LPDDR5X RAM that allows faster operation and consumes less power than the previous generation. Specifically, the product will use LPDDR5X RAM with speeds up to 10.7 Gbps.
Advanced RAM technology helps Galaxy S26 Ultra deliver superior performance
PHOTO: SAMMOBILE
This is the maximum speed of the LPDDR5X 1γ (1-gamma) announced by chipmaker Micron in June, which promises up to 20% better power efficiency than the previous generation. The specific maximum speed and timings suggest that this is the chip that will be featured on the Galaxy S26 Ultra.
Benefits of new RAM technology for the Galaxy S26 Ultra
Compared to the Galaxy S25 Ultra, which has not yet announced its official RAM speed but has been confirmed by Micron to use LPDDR5X 1β (1-beta) with a maximum speed of 9.6 Gbps, the upgrade from 9.6 Gbps to 10.7 Gbps represents an 11.5% increase in bandwidth. Combined with the 1γ design, this should result in higher performance.
For power users, this is big news. More bandwidth means the phone’s processor can move data around faster, supporting heavy-duty tasks like 8K video recording, high-frame-rate gaming, and running AI (artificial intelligence) features directly on the device. The improved performance can also help reduce battery drain during these tasks, especially as AI becomes a bigger part of Samsung’s Galaxy experience.
In addition to the RAM upgrade, the Galaxy S26 Ultra is also said to come with other improvements such as the Snapdragon 8 Elite 2 chip manufactured by TSMC, a thinner chassis, and a larger screen with thin bezels. Although Samsung has not confirmed any information, these leaks show that the Galaxy S26 Ultra is a phone with many significant configuration upgrades.
Source: https://thanhnien.vn/thong-tin-khien-galaxy-s26-ultra-la-lua-chon-dang-de-nang-cap-185250809165635632.htm
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